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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ626
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source. The 2SJ626 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 -0.05
0.65-0.15
+0.1
0.16+0.1 -0.06
2.8 0.2
3
1.5
FEATURES
* 4.0 V drive available * Low on-state resistance RDS(on)1 = 388 m MAX. (VGS = -10 V, ID = -1.0 A) RDS(on)2 = 514 m MAX. (VGS = -4.5 V, ID = -1.0 A) RDS(on)3 = 556 m MAX. (VGS = -4.0 V, ID = -1.0 A)
0 to 0.1
1 2
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2 1 : Gate 2 : Source 3 : Drain
ORDERING INFORMATION
PART NUMBER 2SJ626 PACKAGE SC-96 (Mini Mold Thin Type)
Marking: XN
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
-60 m20 m1.5 m6.0 0.2 1.25 150 -55 to +150
V V A A W W C C
Gate Gate Protection Diode
Body Diode
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec. Remark
Note2
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15962EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan
(c)
2002
2SJ626
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = -48 V VGS = -10 V ID = -1.5 A IF = 1.5 A, VGS = 0 V TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1.0 mA VDS = -10 V, ID = -1.0 A VGS = -10 V, ID = -1.0 A VGS = -4.5 V, ID = -1.0 A VGS = -4.0 V, ID = -1.0 A VDS = -10 V VGS = 0 V f = 1.0 MHz VDD = -30 V, ID = -1.0 A VGS = -10 V RG = 10 -1.5 1.0 -2.1 2.5 310 385 417 255 45 17 17 29 92 65 8.2 1.3 2.2 0.86 388 514 556 MIN. TYP. MAX. -1.0 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V
m10
-2.5
TEST CIRCUIT 1 SWITCHING TIME
VGS(-) D.U.T. RL PG. RG VDD
VDS
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = -2 mA 50 RL VDD
VGS
Wave Form
0
10%
VGS
90%
VDS(-)
90% 90% 10% 10%
PG.
VDS VGS (-) 0 = 1 s Duty Cycle 1%
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet D15962EJ1V0DS
2SJ626
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
1.5
Mounted on FR-4 board t 5 sec.
dT - Percentage of Rated Power - %
100
PT - Total Power Dissipation - W
1.25
80
1
60
0.75
40
0.5
20
0.25
0
0 0 25 50 75 100 125 150 175
0
25
50
75
100
125
150
175
TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA
-10
RDS(on) Limited (VGS = -10 V) ID(DC) ID(pulse) PW = 1 ms 10 ms
TA - Ambient Temperature - C
ID - Drain Current - A
-1
100 ms
5s
-0.1
Single Pulse Mounted on FR-4 board of 2 50 cm x 1.1 mm
-0.01 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - C/W
Single Pulse Without board
100
Mounted on FR-4 board of 2 50 cm x 1.1 mm 10
1 1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15962EJ1V0DS
3
2SJ626
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
-6 Pulsed
FORWARD TRANSFER CHARACTERISTICS
-10 Pulsed VDS = -10 V
ID - Drain Current - A
-4
ID - Drain Current - A
VGS = -10 V
-1
-0.1
-4.5 V -2 -4.0 V
-0.01
TA = 125C 75C 25C -25C
-0.001
0 0 -1 -2 -3
-0.0001 -1 -2 -3 -4 -5
VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
- 2.6 10
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
Pulsed VDS = -10 V
VGS(off) - Gate Cut-off Voltage - V
VDS = -10 V ID = -1.0 mA - 2.4
1 TA = -25C 25C 75C 125C
- 2.2
-2
0.1
- 1.8
- 1.6 -50 0 50 100 150
0.01 -0.01
-0.1
-1
-10
Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m
800 Pulsed ID = -1.0 A 600 VGS = -4.0 V 800
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE
Pulsed ID = -1.0 A 600
-4.5 V -10 V
400
400
200
200
0 -50
0 0 -4 -8 - 12 - 16 - 20
0
50
100
150
Tch - Channel Temperrature - C
VGS - Gate to Source Voltage - V
4
Data Sheet D15962EJ1V0DS
2SJ626
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m
800 800
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
TA = 125C 600 75C 25C -25C 200 Pulsed VGS = -4.5 V 0 -0.01 -0.1 -1 -10
600
TA = 125C
75C 400 25C -25C 200 Pulsed VGS = -10 V 0 -0.01 -0.1 -1 -10
400
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m
800 TA = 125C TA==125C TA 125C 600 75C 25C 400 -25C
ID - Drain Current - A SWITCHING CHARACTERISTICS
1000
td(on), tr, td(off), tf - Switching Time - ns
100
t d(off) tf tr t d(on)
10 VDD = -30 V VGS = -10 V RG = 10 1 -0.1 -1 -10
200 Pulsed VGS = -4.0 V 0 -0.01 -0.1 -1 -10
ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000 VGS = 0 V f = 1.0 MHz
ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
Ciss, Coss, Crss - Capacitance - pF
IF - Diode Forward Current - A
C iss
100
C oss
1
10
C rss
0.1
Pulsed VGS = 0 V
1 -0.1
0.01
-1
-10
-100
0.4
0.6
0.8
1
1.2
VDS - Drain to Source Voltage - V
VF(S-D) - Source to Drain Voltage - V
Data Sheet D15962EJ1V0DS
5
2SJ626
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
- 10 ID = -1.5 A
VGS - Gate to Source Voltage - V
-8
VDD = -12 V -30 V -48 V
-6
-4
-2
0 0 2 4 6 8 10
QG - Gate Charge - nC
6
Data Sheet D15962EJ1V0DS
2SJ626
[MEMO]
Data Sheet D15962EJ1V0DS
7
2SJ626
* The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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